Yazar "Zhu, Haoyue" seçeneğine göre listele

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    Author Correction: A computational framework for guiding the MOCVD-growth of wafer-scale 2D materials (npj Computational Materials, (2022), 8, 1, (240), 10.1038/s41524-022-00936-y)
    (Nature Research, 2022) Momeni, Kasra; Ji, Yanzhou; Nayir, Nadire; Sakib, Nuruzzaman; Zhu, Haoyue; Paul, Shiddartha; Choudhury, Tanushree H.
    In this article the author name Nuruzzaman Sakib was incorrectly written as Nurruzaman Sakib. The original article has been corrected. © The Author(s) 2022.
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    A computational framework for guiding the MOCVD-growth of wafer-scale 2D materials
    (Nature Research, 2022) Momeni, Kasra; Ji, Yanzhou; Nayir, Nadire; Sakib, Nurruzaman; Zhu, Haoyue; Paul, Shiddartha; Choudhury, Tanushree H.
    Reproducible wafer-scale growth of two-dimensional (2D) materials using the Chemical Vapor Deposition (CVD) process with precise control over their properties is challenging due to a lack of understanding of the growth mechanisms spanning over several length scales and sensitivity of the synthesis to subtle changes in growth conditions. A multiscale computational framework coupling Computational Fluid Dynamics (CFD), Phase-Field (PF), and reactive Molecular Dynamics (MD) was developed – called the CPM model – and experimentally verified. Correlation between theoretical predictions and thorough experimental measurements for a Metal-Organic CVD (MOCVD)-grown WSe2 model material revealed the full power of this computational approach. Large-area uniform 2D materials are synthesized via MOCVD, guided by computational analyses. The developed computational framework provides the foundation for guiding the synthesis of wafer-scale 2D materials with precise control over the coverage, morphology, and properties, a critical capability for fabricating electronic, optoelectronic, and quantum computing devices.
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    Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphire
    (Nature Portfolio, 2023) Zhu, Haoyue; Nayir, Nadire; Choudhury, Tanushree H. H.; Bansal, Anushka; Huet, Benjamin; Zhang, Kunyan
    Surface chemistry controls the location of WSe2 nucleation on a stepped sapphire substrate. Preferential nucleation at either the top or bottom step edge can be used to minimize mirror twin domains and produce unidirectional WSe2 monolayers. Epitaxial growth of two-dimensional transition metal dichalcogenides on sapphire has emerged as a promising route to wafer-scale single-crystal films. Steps on the sapphire act as sites for transition metal dichalcogenide nucleation and can impart a preferred domain orientation, resulting in a substantial reduction in mirror twins. Here we demonstrate control of both the nucleation site and unidirectional growth direction of WSe2 on c-plane sapphire by metal-organic chemical vapour deposition. The unidirectional orientation is found to be intimately tied to growth conditions via changes in the sapphire surface chemistry that control the step edge location of WSe2 nucleation, imparting either a 0 & DEG; or 60 & DEG; orientation relative to the underlying sapphire lattice. The results provide insight into the role of surface chemistry on transition metal dichalcogenide nucleation and domain alignment and demonstrate the ability to engineer domain orientation over wafer-scale substrates.