Temperature-dependent model for hole transport mechanism in a poly(1.8-diaminocarbazole)/Si structure

Basit Öğe Kaydı
dc.authorid0000-0002-6001-8494en_US
dc.authorid0000-0002-6011-3504en_US
dc.contributor.authorSoylu, M.
dc.contributor.authorGülen, M.
dc.contributor.authorSönmezoğlu, Savaş
dc.date.accessioned2019-12-06T21:16:37Z
dc.date.available2019-12-06T21:16:37Z
dc.date.issued2016
dc.departmentKMÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.descriptionWOS:000382612100002en_US
dc.description.abstractTo investigate the conduction mechanism in an organic/inorganic heterojunction, poly(1.8-diaminocarbazole) (PDACz) on a p-type silicon substrate in a sandwich configuration were contacted with Al electrodes and temperature-dependent current-voltage measurements performed in the temperature range 280-380K. It was found that the barrier height decreased and the ideality factor increased with decreasing temperature. Temperature and bias-dependent transition regimes were observed. These anomalies are explained by further analysis of the low- and high-field regions of the current-voltage curves. The trap density H-b and the characteristic trap energy E-t were found to be 1.85 x 10(17)cm(-3) and 25meV, respectively. Assuming that the trapped carrier density p(t) is higher than free-carrier density p, it is concluded that hole transport is dominated by space-charge-limited currents.en_US
dc.identifier.citationSoylu, M., Gülen, M., Sönmezoğlu, S. (2016). Temperature-dependent model for hole transport mechanism in a polyakbadem variety) during roasting and storage. Philosophical Magazine, 25, 96.
dc.identifier.doi10.1080/14786435.2016.1210263
dc.identifier.endpage2614en_US
dc.identifier.issn1478-6435
dc.identifier.issn1478-6443
dc.identifier.issue25en_US
dc.identifier.scopus2-s2.0-84979995837
dc.identifier.scopusqualityQ3
dc.identifier.startpage2600en_US
dc.identifier.urihttps://dx.doi.org/10.1080/14786435.2016.1210263
dc.identifier.urihttps://hdl.handle.net/11492/2942
dc.identifier.volume96en_US
dc.identifier.wosWOS:000382612100002
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorGülen, Mahir
dc.institutionauthorSönmezoğlu, Savaş
dc.language.isoen
dc.publisherTaylor & Francis LTDen_US
dc.relation.journalPhilosophical Magazineen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCharge Transporten_US
dc.subjectElectrical Propertiesen_US
dc.subjectOrganic-Inorganic Heterojunctionsen_US
dc.subjectSCLCen_US
dc.titleTemperature-dependent model for hole transport mechanism in a poly(1.8-diaminocarbazole)/Si structureen_US
dc.typeArticle

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
[ X ]
İsim:
Soylu, M. 2016.pdf
Boyut:
2.59 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Tam Metin/Full text
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümü, Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu