Solution processed white light photodetector based N, N '-di(2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor

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dc.authorid0000-0003-4192-5512en_US
dc.contributor.authorTozlu, Cem
dc.contributor.authorKuş, Mahmut
dc.contributor.authorCan, Mustafa
dc.contributor.authorErsöz, Mustafa
dc.date.accessioned2019-12-06T21:17:18Z
dc.date.available2019-12-06T21:17:18Z
dc.date.issued2014
dc.departmentKMÜ, Mühendislik Fakültesi, Enerji Sistemleri Mühendisliği Bölümüen_US
dc.descriptionWOS:000344749400005en_US
dc.description.abstractIn this study, a solution-processed n-type photo-sensing organic thin film transistor was investigated using polymeric dielectric under different white light illuminations. N, N'-di (2-ethylhexyl)-3,4,9,10-perylene diimide and divinyl tetramethyl disiloxane-bis (benzo-cyclobutene) were used as a soluble active organic semiconductor and as a dielectric material, respectively. Stable amplification was observed in the visible region without gate bias by the device. The electrical characterization results showed that an n-type phototransistor with a saturated electron mobility of 0.6 x 10(-3) cm(2)/V.s and a threshold voltage of 1.8 V was obtained. The charge carrier density of the channel of the device exhibited photo-induced behaviors that strongly affected the electrical properties of the transistor. The photosensitivity and photoresponsivity values of the device were 63.82 and 24 mA/W, respectively. These findings indicate that perylene diimide is a promising material for use on organic based phototransistors. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipFP7-LAMAND project [PN: 245565]en_US
dc.description.sponsorshipWe are grateful to the FP7-LAMAND (PN: 245565) project for providing support funds. In addition, we thank Ass. Prof. A. Tahir Bayrac for proofreading the text.en_US
dc.identifier.citationTozlu, C., Kuş, M., Can, M., Ersöz, M. (2014). Solution processed white light photodetector based N, N′-di (2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistor. Thin Solid Films, Volume 569, 31 October 2014, Pages 22-27.en_US
dc.identifier.doi10.1016/j.tsf.2014.07.055
dc.identifier.endpage27en_US
dc.identifier.issn0040-6090
dc.identifier.scopus2-s2.0-84927730043
dc.identifier.scopusqualityQ2
dc.identifier.startpage22en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.tsf.2014.07.055
dc.identifier.urihttps://hdl.handle.net/11492/3095
dc.identifier.volume569en_US
dc.identifier.wosWOS:000344749400005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorTozlu, Cem
dc.language.isoen
dc.publisherElsevier Science SAen_US
dc.relation.journalThin Solid Filmsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectPhototransistoren_US
dc.subjectPerylene Diimideen_US
dc.subjectPhotosensoren_US
dc.titleSolution processed white light photodetector based N, N '-di(2-ethylhexyl)-3,4,9,10-perylene diimide thin film phototransistoren_US
dc.typeArticle

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