Thermally evaporated FeMGaMnSi (M=Co, Ni) high entropy alloy thin films: Magnetic and magnetoresistance properties
Yükleniyor...
Tarih
2020
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
Fe26.7M26.7Ga15.6Mn20Si11 (M=Co, Ni) high entropy alloy (HEA) thin films were prepared using a thermal evaporation method. The structural, magnetic, electrical and magnetoresistance properties of FeMGaMnSi amorphous HEA thin films were investigated to determine the effects of Co and Ni substitution and annealing. The amorphous structure of Fe26.7Co26.7Ga15.6Mn20Si11 and Fe26.7Ni26.7Ga15.6Mn20Si11 HEA thin films was confirmed by the XRD patterns. The HEA thin film thicknesses were measured to be 82.3 nm using an optic profilometer. The HEA with Co content relatively exhibits high saturation magnetization (1538 emu/cm(3)) value at room temperature. The electrical resistivity (rho) of the Fe26.7Ni26.7Ga15.6Mn20Si11 increases from 48 to 425 mu Omega cm with the annealing process at room temperature. The best magnetoresistance (MR) was obtained to be 105% at 300 K under an applied field of 1 T for the Fe26.7Ni26.7Ga15.6Mn20Si11 HEA thin film.
Açıklama
WOS:000537655200004
Anahtar Kelimeler
High Entropy Alloys (Hea), Magnetic Anisotropy, Amorphous Thin Films, Magnetoresistance, Electrical Resistivity
Kaynak
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
539
Sayı
Künye
Hacıismailoglu, M. C., Sarlar, K., Tekgül, A., Küçük, İ., Şarlar, K. (July 01, 2020). Thermally evaporated FeMGaMnSi (M[dbnd]Co, Ni) high entropy alloy thin films: Magnetic and magnetoresistance properties. Journal of Non-Crystalline Solids, 539.
