Current transport mechanism of antimony-doped TiO2 nanoparticles based on MOS device
Yükleniyor...
Tarih
2013
Yazarlar
Dergi Başlığı
Dergi ISSN
Cilt Başlığı
Yayıncı
Elsevier Science SA
Erişim Hakkı
info:eu-repo/semantics/closedAccess
Özet
The present work reports the fabrication and electrical characterizations of Sb-doped TiO2/n-Si metal-oxide-semiconductor (MOS) device. To determine the effect of antimony dopant on the physical properties of TiO2, pure and Sb-doped thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and ultraviolet-visible (UV-vis) spectroscopy. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were done to determine electrical properties of the MOS structure. This structure showed a good rectifying behavior with a typical ideality factor of 2.09, which was considered high due to the current mechanism and large defect density at the interface. The possible conduction mechanism of the MOS structure was determined by analyzing the I-V characteristics. The obtained results show that this MOS structure is an excellent candidate for semiconductor device applications. (C) 2013 Elsevier B.V. All rights reserved.
Açıklama
WOS:000323238600003
Anahtar Kelimeler
Sb-Doped TiO2 Nanoparticles, I-V and C-V Characteristics, Metal-Oxide-Semiconductor (MOS) Device, Fowler-Nordheim Tunneling
Kaynak
WoS Q Değeri
Q1
Scopus Q Değeri
Q1
Cilt
199
Sayı
Künye
Sönmezoğlu, S., Akın, S. (2013). Current transport mechanism of antimony-doped TiO2 nanoparticles based on MOS device. Sensors and Actuators A: Physical, Volume 199, 1 September 2013, Pages 18-23.
