Improvement of physical properties of ZnO thin films by tellurium doping

dc.authorid0000-0002-6011-3504en_US
dc.authorid0000-0002-2626-4050en_US
dc.contributor.authorSönmezoğlu, Savaş
dc.contributor.authorAkman, Erdi
dc.date.accessioned2019-12-06T21:17:18Z
dc.date.available2019-12-06T21:17:18Z
dc.date.issued2014
dc.departmentKMÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.description9th Nanoscience and Nanotechnology Conference (NANOTR) -- JUN 24-28, 2013 -- Erzurum, TURKEYen_US
dc.descriptionWOS:000344380500056en_US
dc.description.abstractThis investigation addressed the structural, optical and morphological properties of tellurium incorporated zinc oxide (Te-ZnO) thin films. The obtained results indicated that Te-doped ZnO thin films exhibit an enhancement of band gap energy and crystallinity compared with non-doped films. The optical transmission spectra revealed a shift in the absorption edge toward lower wavelengths. X-ray diffraction measurement demonstrated that the film was crystallized in the hexagonal (wurtzite) phase and presented a preferential orientation along the c-axis. The XRD obtained patterns indicate that the crystallite size of the thin films, ranging from 23.9 to 49.1 nm, changed with the Te doping level. The scanning electron microscopy and atomic force microscopy results demonstrated that the grain size and surface roughness of the thin films increased as the Te concentration increased. Most significantly, we demonstrate that it is possible to control the structural, optical and morphological properties of ZnO thin films with the isoelectronic Te-incorporation level. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipEuropean Cooperation in Science and Technology through COST Action [MP1302]; Scientific and Technological Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [112T981]en_US
dc.description.sponsorshipAuthors would like to thank the European Cooperation in Science and Technology through COST Action MP1302 Nanospectroscopy and the Scientific and Technological Research Council of Turkey (TUBITAK Grant number 112T981) for the financial support of this research.en_US
dc.identifier.citationSönmezoğlu, S., Akman, E. (2014). Improvement of physical properties of ZnO thin films by tellurium doping. Applied Surface Science, Volume 318, 1 November 2014, Pages 319-323.en_US
dc.identifier.doi10.1016/j.apsusc.2014.06.187
dc.identifier.endpage323en_US
dc.identifier.issn0169-4332
dc.identifier.issn1873-5584
dc.identifier.scopusscopusidyok
dc.identifier.startpage319en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.apsusc.2014.06.187
dc.identifier.urihttps://hdl.handle.net/11492/3093
dc.identifier.volume318en_US
dc.identifier.wosWOS:000344380500056
dc.identifier.wosqualityN/A
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorSönmezoğlu, Savaş
dc.institutionauthorAkman, Erdi
dc.language.isoen
dc.publisherElsevier Science BVen_US
dc.relation.journalApplied Surface Scienceen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectTe-doped ZnOen_US
dc.subjectSol-Gel Methoden_US
dc.subjectMicrostructure and Optical Propertiesen_US
dc.titleImprovement of physical properties of ZnO thin films by tellurium dopingen_US
dc.typeArticle

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