Electrical characteristics of DNA-based metal-insulator-semiconductor structures

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dc.contributor.authorSönmezoğlu, Savaş
dc.contributor.authorSönmezoğlu, Özlem Ateş
dc.contributor.authorÇankaya, G.
dc.contributor.authorYıldırım, Ahmet
dc.contributor.authorSerin, N.
dc.date.accessioned2019-12-06T21:02:23Z
dc.date.available2019-12-06T21:02:23Z
dc.date.issued2010
dc.departmentKMÜ, Kamil Özdağ Fen Fakültesi, Biyoloji Bölümüen_US
dc.descriptionWOS:000279993900160en_US
dc.description.abstractHigh quality sandwich device was fabricated from wheat DNA molecular film by solution processing located between Au and n-type silicon inorganic semiconductor. We have performed the electrical characteristics of the device such as current voltage (I-V) and capacitance voltage (C-V) at room temperature. DNA-based on this structure showed an excellent rectifying behavior with a typical ideality factor of 1.22, and that DNA film increased the effective barrier height by influencing the space charge region of Si. We proposed that DNA could be an insulatorlike material with a wide optical band energy gap of 4.19 eV from its optical absorbance characteristics. Additionally, the energy distribution of interface state density, determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height, decreases exponentially with bias from 7.48 x 10(15) m(-2) eV(-1) in (E(c)-0.40) eV to 8.56 x 10(14) m(-2) eV(-1) in (E(c)-0.72) eV. (C) 2010 American Institute of Physics. [doi:10.1063/1.3447985]en_US
dc.identifier.citationSönmezoğlu, S., Çankaya, G., Sönmezoğlu, Ö. A., Yıldırım, A., Serin, N. (2010). Electrical characteristics of DNA-based metal-insulator-semiconductor structures. Journal of Applied Physics, 107, 12.
dc.identifier.doi10.1063/1.3447985
dc.identifier.issn0021-8979
dc.identifier.issue12en_US
dc.identifier.scopus2-s2.0-77954186434
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://dx.doi.org/10.1063/1.3447985
dc.identifier.urihttps://hdl.handle.net/11492/2322
dc.identifier.volume107en_US
dc.identifier.wosWOS:000279993900160
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorYıldırım, Ahmet
dc.language.isoen
dc.publisherAmer Inst Physicsen_US
dc.relation.journalJournal of Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleElectrical characteristics of DNA-based metal-insulator-semiconductor structuresen_US
dc.typeArticle

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