The C-V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature

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dc.authorid0000-0003-1463-9764en_US
dc.authorid0000-0002-3689-0469en_US
dc.contributor.authorKoçyiğit, Adem
dc.contributor.authorKüçükçelebi, Hayreddin
dc.contributor.authorSarılmaz, Adem
dc.contributor.authorÖzel, Faruk
dc.contributor.authorYıldırım, Murat
dc.date.accessioned2019-12-06T21:15:05Z
dc.date.available2019-12-06T21:15:05Z
dc.date.issued2019
dc.departmentKMÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.descriptionWOS:000475587800016en_US
dc.description.abstractCu2WSe4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance-voltage (C-V) and conductance-voltage (G-V) measurements were performed on the Cu2WSe4/p-Si heterojunction device depending on wide range temperatures from 80 to 400K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (R-s) and interface states density (N-ss) were extracted from C-V and G-V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu2WSe4/p-Si device can be employed for controllable capacitor applications.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [17401159]; Karamanoglu Mehmetbey UniversityKaramanoglu Mehmetbey University [32-M-16]en_US
dc.description.sponsorshipThe authors would like to thank to Selcuk University BAP office (Project Number 17401159) and Karamanoglu Mehmetbey University (Grand Number: 32-M-16) for Scientific Research Foundation.en_US
dc.identifier.citationKoçyiğit, A., Küçükçelebi, H., Sarılmaz, A., Özel, F., Yıldırım, M. (2019). The C-V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature. Journal Of Materials Science / Materials In Electronics.
dc.identifier.doi10.1007/s10854-019-01553-0
dc.identifier.endpage12000en_US
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.issue13en_US
dc.identifier.scopus2-s2.0-85067695515
dc.identifier.scopusqualityQ2
dc.identifier.startpage11994en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-019-01553-0
dc.identifier.urihttps://hdl.handle.net/11492/2421
dc.identifier.volume30en_US
dc.identifier.wosWOS:000475587800016
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorSarılmaz, Adem
dc.institutionauthorÖzel, Faruk
dc.language.isoen
dc.publisherSpringeren_US
dc.relation.journalJournal Of Materials Science / Materials In Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.titleThe C-V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperatureen_US
dc.typeArticle

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