The surface and electrical properties of the Al/Ba2P2O7/p-Si heterojunctions in wide range of temperature and frequency

Basit Öğe Kaydı
dc.authorid0000-0002-3689-0469en_US
dc.authorid0000-0001-5592-1411en_US
dc.contributor.authorSevgi̇li̇, Ömer
dc.contributor.authorÖzel, Faruk
dc.contributor.authorRüşen, Aydın
dc.contributor.authorYiğit, Evin
dc.contributor.authorOrak, İkram
dc.date.accessioned2021-12-13T06:32:23Z
dc.date.available2021-12-13T06:32:23Z
dc.date.issued2022en_US
dc.departmentKMÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.descriptionWOS:000764258600001en_US
dc.description.abstractIn the present study, the Al/Ba2P2O7/p-Si device was fabricated using barium based pyrophosphate at the interface layer. The interface layer and metallic contact were deposited with thermal evaporation systems on p type Si. Better understand surface morphology and material characteristics were studied by atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray difraction (XRD). The effect on interface layer was observed via electrical measurements. The electrical and photoresponsivity characteristics of device were investigated with curent-voltage (I-V) measurements at dark and illumination conditions. Some diode parameters such as ideality factor, barrier height and series resistance of device were calculated using thermionic emission (TE) theory and Norde functions. They were found to be 3.8, 0.63 eV and 1.73 kΩ at room temperature, respectively. The current-voltage-temperature (I-V-T) measurements were taken to understand the temperature response of the device. The other electrical characteristics of device are capacitance–conductance–voltage (C–G–V) measurements for various frequencies. The some electrical parameters such as Fermi level (Ef), barrier height and donor concentration (Nd) were calculated with C-G-V measurements.en_US
dc.identifier.citationSevgili, Ö., Özel, F., Ruşen, A., Yiğit, E., Orak, İ. (2022). The surface and electrical properties of the Al/Ba2P2O7/p-si heterojunctions in wide range of temperature and frequency. Surfaces and Interfaces, 28 doi:10.1016/j.surfin.2021.101637en_US
dc.identifier.doi10.1016/j.surfin.2021.101637
dc.identifier.issn2468-0230
dc.identifier.scopus2-s2.0-85120411127
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1016/j.surfin.2021.101637
dc.identifier.urihttps://hdl.handle.net/11492/5613
dc.identifier.volume28en_US
dc.identifier.wosWOS:000764258600001
dc.identifier.wosqualityQ1
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorÖzel, Faruk
dc.institutionauthorRüşen, Aydın
dc.language.isoen
dc.publisherElsevier B.V.en_US
dc.relation.journalSurfaces and Interfacesen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectBaP2O7 Materialsen_US
dc.subjectPhotodiodeen_US
dc.subjectSchottky Barrier Diodeen_US
dc.subjectTemperature Effecten_US
dc.titleThe surface and electrical properties of the Al/Ba2P2O7/p-Si heterojunctions in wide range of temperature and frequencyen_US
dc.typeArticle

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