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    The diode and photodiode performances of BaZrO3 perovskite-based device under the influence of thermal and light external stimuli
    (Elsevier B.V., 2022) Orak, İkram; Karabulut, Abdulkerim; Karabulut, Abdulkerim; Yiğit, Evin; Sevgi̇li̇, Ömer; Rüşen, Aydın; Özel, Faruk
    One of the most important outputs of a prepared material is the application areas in which it can be used. In this context, in this study, the idea of how a diode produced by using the prepared BaZrO3 perovskite would behave under the influence of different physical external stimuli was taken into action, thus, the Al/BaZrO3/Si heterojunction was produced. The metallic contacts and BaZrO3 thin film interfacial layer used in the fabricated device were coated by thermal evaporation technique. It has been understood from the taken AFM images and the analyzes made on these images that one of the best methods that can be used for such devices, where the parameters such as roughness and homogeneity of the material used in the interface are of great importance, is the thermal evaporation technique. In addition, the generated device was examined in detail with SEM and XRD analyzes to reveal the morphological and structural features. Apart from the structural properties, the electrical properties of the device were examined under the influence of temperature and light stimuli, and the changes in the behavior of the device were analyzed. The performed current-voltage measurements under different light sources showed that the device was sensitive to light, and temperature-dependent measurements also showed that the device could be used in applications in a wide temperature range. Some prominent diode parameters such as series resistance, barrier height and ideality factor value of the device were computed by the usage of Norde and thermionic emission approaches, and the relevant parameter values were acquired as 5.32 kΩ, 0.55 eV and 1.77, respectively. In addition to these, the conductivity and capacitance measurements were performed depending on the changing frequency and application voltage, and electrical parameters such as donor concentration (Nd), fermi level (EF), maximum electric field (Em) and barrier height (ΦB) were computed in the light of the obtained data. The obtained outcomes proved that the produced device and the utilized BaZrO3 perovskite material could be used in photovoltaic and electronic applications
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    The effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction
    (Elsevier, 2020) Sarılmaz, Adem; Özel, Faruk; Karabulut, Abdulkerim; Orak, Ikram; Şahinkaya, Mehmet Akif
    Cu2MnSnS4 chalcogenide was obtained with the help of hot-injection technique and used as an interfacial thin layer to examine its behavior under varying temperature and frequency conditions. The well-known XRD, SEM and EDX techniques were utilized in the analysis of structural and content. To investigate the electrical properties, the variations in current, capacitance, conductance and impedance depending on the changing voltage were investigated. In the current-voltage measurements, measurements were made in distinct temperatures in addition to room temperature, and the effect of the temperature on the basic electrical parameters such as barrier height and ideality factor was investigated. The results showed that the temperature significantly affected the electrical properties. However, capacitance, impedance and conductance measurements were carried out for various frequencies. The performed experiments indicate that the fabricated heterojunction-based device using Cu2MnSnS4 chalcogenide could be evaluated in the wide temperature applications and enhanced as a capacitor in the electronic technology.