A new penternary semiconductor Cu2CoSn(SSe)(4) nanocrystal: a study on structural, dielectric and optical properties

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dc.authorid0000-0002-3689-0469en_US
dc.authorid0000-0003-1463-9764en_US
dc.contributor.authorAkın, U.
dc.contributor.authorÖzel, Faruk
dc.contributor.authorSarılmaz, Adem
dc.contributor.authorYüksel, Ömer Faruk
dc.contributor.authorTuǧluoǧlu, Nihat
dc.date.accessioned2021-10-01T08:26:38Z
dc.date.available2021-10-01T08:26:38Z
dc.date.issued2021en_US
dc.departmentKMÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.descriptionWOS:000698560600005en_US
dc.description.abstractIn recent years, the penternary nanocrystals synthesized as an alternative to Pt in dye-sensitized solar cells have attracted the attention of researchers due to their many important properties such as low-cost elemental component, high absorption coefficient, optimal optical band gap, high efficiency and environmental stability. Because of these attractive features, a new penternary chalcogenide semiconductor, namely Cu2CoSn(SSe)(4) (CCTSSe), have been synthesized by hot-injection technique and its structural, dielectrical and optical dispersion characteristics have been reported. CCTSSe nanostructure films were produced by spin-coating method onto glass substrates. The optical, morphological, compositional and structural properties of this penternary chalcogenide semiconductor was characterized by ultraviolet-visible-near (UV-VIS-NIR) spectroscopy, energy-dispersive spectrometer (EDS), Raman spectroscopy, X-ray diffraction (XRD) and transmission electron microscopy (TEM). The CCTSSe penternary nanostructure has a band gap energy of 1.186 eV, single crystalline, adequate stoichiometric ratio, kesterite phase and 10-20 nm particle sizes which are forming nanospheres. The optical dispersion and dielectric characteristics were investigated based on the reflectance and transmittance spectra measured by spectrophotometer between 200 and 2000 nm. The value of extinction coefficient and refractive index were estimated, and a relation between the optical band gap values and the refractive index values was debated. The values of oscillator energy and dispersion energy were determined by the single oscillator of the Wemple-DiDomenico method. The loss tangent and the dielectric constants were evaluated. The obtained results report the capability of the high-efficiency and low-cost CCTSSe thin films in photonic and photovoltaic applications, especially in dye-sensitized solar cells.en_US
dc.identifier.citationAkın, Ü., Özel, F., Sarılmaz, A. et al.(2021). A new penternary semiconductor Cu2CoSn(SSe)4 nanocrystal: a study on structural, dielectric and optical properties. Journal of Materials Science-Materials in Electronics . https://doi.org/10.1007/s10854-021-07041-8en_US
dc.identifier.doi10.1007/s10854-021-07041-8
dc.identifier.issn0957-4522
dc.identifier.issn1573-482X
dc.identifier.scopus2-s2.0-85115409844
dc.identifier.scopusqualityQ2
dc.identifier.urihttps://doi.org/10.1007/s10854-021-07041-8
dc.identifier.urihttps://hdl.handle.net/11492/5341
dc.identifier.wosWOS:000698560600005
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorÖzel, Faruk
dc.institutionauthorSarılmaz, Adem
dc.language.isoen
dc.publisherSpringeren_US
dc.relation.journalJournal of Materials Science-Materials in Electronicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectCu2znsns4 Thin-Filmsen_US
dc.subjectSolar-Cellsen_US
dc.subjectDispersion Parametersen_US
dc.subjectElectrical-Propertiesen_US
dc.subjectLayeren_US
dc.subjectPerformancesen_US
dc.titleA new penternary semiconductor Cu2CoSn(SSe)(4) nanocrystal: a study on structural, dielectric and optical propertiesen_US
dc.typeArticle

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