A novel device fabricated with Cu2NiSnS4 chalcogenide: Morphological and temperature-dependent electrical characterizations

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dc.authorid0000-0003-1463-9764en_US
dc.authorid0000-0002-3689-0469en_US
dc.contributor.authorKarabulut, Abdülkerim
dc.contributor.authorSarılmaz, Adem
dc.contributor.authorÖzel, Faruk
dc.contributor.authorOrak, İkram
dc.contributor.authorŞahinkaya, Mehmet Akif
dc.date.accessioned2019-12-06T21:15:00Z
dc.date.available2019-12-06T21:15:00Z
dc.date.issued2020
dc.departmentKMÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.descriptionWOS:000496996300010en_US
dc.description.abstractCu2NiSnS4 nanorods were synthesized by the usage of hot-injection technique and used as interlayer between the p-Si and Al metal in order to examine their behavior against the temperature and frequency changes. The current-voltage measurements were performed in 80-300 K temperature range with 20 K steps. The X-Ray Diffraction (XRD) was used to prove the crystal structure of the synthesized Cu2NiSnS4 nanorods. Some crucial device parameters such as barrier height, series resistance and ideality factor values were calculated, and the obtained values were compared with other studies in the literature. It has been seen that the calculated parameters of the prepared device are strongly dependent on temperature changes. Besides, the capacitor behavior of fabricated device was investigated depending on the frequency and voltage changes. The experimental results indicated that the prepared device with Cu2NiSnS4 nanorods interlayer could be utilized in the electronic technology, especially applications in wide temperature range.en_US
dc.description.sponsorshipKaramanoglu Mehmetbey University BILTEM (Scientific and Technological Research and Application Center)Karamanoglu Mehmetbey University; TUBITAK (The Scientific and Technological Research Council of Turkey)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [217M212]; Scientific Research Projects Unit of Sinop UniversitySinop University [MMF-1901-18-33]en_US
dc.description.sponsorshipThis work is supported by Karamanoglu Mehmetbey University BILTEM (Scientific and Technological Research and Application Center) and TUBITAK (The Scientific and Technological Research Council of Turkey) under project number 217M212, and the Scientific Research Projects Unit of Sinop University, Project No. MMF-1901-18-33. The authors would like to thank Sinop University.en_US
dc.identifier.citationKarabulut, A., Sarılmaz, A., Özel, F., Orak, İ., Şahinkaya, M. A. (2020). A novel device fabricated with Cu2NiSnS4 chalcogenide: Morphological and temperature-dependent electrical characterizations. Current Applied Physics, 20, 1 , 58-64.
dc.identifier.doi10.1016/j.cap.2019.10.011
dc.identifier.endpage64en_US
dc.identifier.issn1567-1739
dc.identifier.issn1878-1675
dc.identifier.issue1en_US
dc.identifier.scopus2-s2.0-85073110449
dc.identifier.scopusqualityQ2
dc.identifier.startpage58en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.cap.2019.10.011
dc.identifier.urihttps://hdl.handle.net/11492/2343
dc.identifier.volume20en_US
dc.identifier.wosWOS:000496996300010
dc.identifier.wosqualityQ3
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.institutionauthorSarılmaz, Adem
dc.institutionauthorÖzel, Faruk
dc.language.isoen
dc.publisherElsevieren_US
dc.relation.journalCurrent Applied Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectElectrical Characterizationen_US
dc.subjectCu2NiSnS4 Nanorodsen_US
dc.subjectHot-Injection Techniqueen_US
dc.subjectInterfacial Layeren_US
dc.subjectDiode Applicationen_US
dc.subjectChalcogenidesen_US
dc.titleA novel device fabricated with Cu2NiSnS4 chalcogenide: Morphological and temperature-dependent electrical characterizationsen_US
dc.typeArticle

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