Photodiode behaviors of the AgSbS2 nanocrystals in a Schottky structure

dc.authorid0000-0002-3689-0469en_US
dc.contributor.authorKoçyigit, Adem
dc.contributor.authorErdal, Mehmet Okan
dc.contributor.authorÖzel, Faruk
dc.contributor.authorYıldırım, Murat
dc.date.accessioned2021-07-28T13:22:06Z
dc.date.available2021-07-28T13:22:06Z
dc.date.issued2021en_US
dc.departmentKMÜ, Mühendislik Fakültesi, Metalurji ve Malzeme Mühendisliği Bölümüen_US
dc.descriptionWOS:000669092500001 PubMed ID:34130261en_US
dc.description.abstractCubic phase AgSbS2 nanocrystals (NCs) were synthesized by the hot-injection method, and they were inserted between the Al and p-Si to fabricate Al/AgSbS2/p-Si photodiode by the thermal evaporation method. AgSbS2 NCs were characterized by XRD, SEM and TEM instruments to confirm the crystal phase, surface morphology as well as crystalline size. The XRD pattern revealed that the cubic crystalline structure of the AgSbS2. The spherical shapes and well surface morphology were affirmed by SEM and TEM analysis. Al/AgSbS2/p-Si photodiode was characterized by I-V measurements depending on the light power intensity and by C-V measurement for various frequencies. I-V characteristics revealed that the Al/AgSbS2/p-Si exhibited good photodiode behavior and a high rectifying ratio. Various diode and detector parameters were extracted from I-V measurements, and they were discussed in detail. The C-V characteristics highlighted that the Al/AgSbS2/p-Si photodiode showed voltage and frequency dependent profile at the accumulation region. The fabricated Al/AgSbS2/p-Si photodiode can be thought for optoelectronic applications.en_US
dc.identifier.citationKocyigit, A., Erdal, M.O., Ozel, F., Yıldırım, M.(2021). Photodiode behaviors of the AgSbS2 nanocrystals in a Schottky structure. Nanotechnology, 32, 38. doi:10.1088/1361-6528/ac0b64en_US
dc.identifier.doi10.1088/1361-6528/ac0b64
dc.identifier.issn0957-4484
dc.identifier.issn1361-6528
dc.identifier.issue38en_US
dc.identifier.pmid34130261
dc.identifier.scopus2-s2.0-85110175469
dc.identifier.scopusqualityQ1
dc.identifier.urihttps://doi.org/10.1088/1361-6528/ac0b64
dc.identifier.urihttps://hdl.handle.net/11492/5099
dc.identifier.volume32en_US
dc.identifier.wosWOS:000669092500001
dc.identifier.wosqualityQ2
dc.indekslendigikaynakWeb of Sceince
dc.indekslendigikaynakScopus
dc.indekslendigikaynakPubMed
dc.institutionauthorÖzel, Faruk
dc.language.isoen
dc.publisherIOP Publishing Ltd.en_US
dc.relation.journalNanotechnologyen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.relation.tubitak217M212
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subjectAgSbS2en_US
dc.subjectTernary Chalcogenidesen_US
dc.subjectSchottky Structureen_US
dc.subjectPhotodiodeen_US
dc.titlePhotodiode behaviors of the AgSbS2 nanocrystals in a Schottky structureen_US
dc.typeArticle

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